File | |
language |
eng
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Author |
Mizuta, Shinsei
Iyota, Masatoshi
Tanaka, Senku
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Description | Photocurrent generation in an indium?tin oxide (ITO)/iodine-doped Ni-phthalocyanine (NiPc-I_x)/C_<60>/In/Al heterojunction device with x~1 was studied. By keeping the device in air after preparation, the device slowly reached a stationary state in which the sign of the photocurrent is opposite to that of a non-doped ITO/NiPc/C_<60>/In/Al device although the rectification direction for the dark current is the same. By a simulation of incident photon-to-current conversion efficiency spectra and a measurement of internal electric field by electroabsorption spectroscopy, it was elucidated that, in the doped device, the band bending near the phthalocyanine/C_<60> interface is absent and the photocurrent is generated by a weak Schottky barrier at the C_<60>/In interface. It is also shown that the C_<60> film encapsulates the doped iodine into the NiPc-I_x layer to stabilize the doping level and prevent the reaction of iodine with In.
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Subject | Organic device
Heterojunction
Doped organic semiconductor
Charge transfer complex
Electroabsorption
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Journal Title |
Thin Solid Films
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Volume | 520
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Issue | 17
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Start Page | 5761
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End Page | 5769
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ISSN | 00406090
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Published Date | 2012-06
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DOI | |
DOI Date | 2016-01-08
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NCID | AA00863068
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Publisher | Elsevier
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NII Type |
Journal Article
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Format |
PDF
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Rights | Copyright © 2012 Elsevier B.V. All rights reserved.
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Text Version |
著者版
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OAI-PMH Set |
Interdisciplinary Graduate School of Science and Engineering
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