島根大学理学部紀要

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島根大学理学部紀要 24
1990-12-25 発行

低転位密度アルミニウム単結晶における原子空孔の生成

Vacancy Generation in Aluminum Single Crystal with a Low Dislocation Density
小野 興太郎
伊藤 一義
ファイル
内容記述(抄録等)
Vacancy generation process m nearly perfect aluminum single crystal was investigated by means of a shape of helical dislocation by X-ray diffraction topography, using a translation type high temperature Lang camera. Helical dislocations as a vacancy source were observed after temperature rise . The shape of helix at initial stage of the appearance looked like a coil spring. But the shape changed to the helix refiected the crystal structure of specimen with the lapse of time. Under-saturation of vacancy in the specimen was estimated from the size of helix. In the results , most of vacancies were emitted from dislocations existed in as-grown nearly perfect crystals, and it takes several hours to achieve the equilibrium concentration of vacancy after a temperature rise.