島根大学理学部紀要

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島根大学理学部紀要 23
1989-12-25 発行

気相成長したSnO_2単結晶の評価

Characterization of Vapour-phase Growth SnO_2 Single Crystal
小野 興太郎
伊藤 一義
古谷 吉男
ファイル
内容記述(抄録等)
Since crystals of Sn0_2 Were prepared by vapour-phase reaction method from anhydrous SnI_4 powder. The single crystals were characterized by optical microscope and X-ray Lang camera in order to clear the growth mechanism and internal defects in them. A Iot of black dots were observed in the Lang topograph. It seems that the dots are planar defects with the Magneli structure in the crystal. The single crystals were grown by the Kossel mechanism.
NCID
AN00108106