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ファイル
言語
英語
著者
内容記述(抄録等)
Experimental data obtained from temperature-dependent Hall-effect measurements on Al-doped p-type 4H-SiC samples, which exhibit an anomalous sign reversal of the Hall coefficient to negative at low temperatures, are analyzed on the basis of a previously proposed impurity hopping conduction model. According to the small-polaron theory for the nonadiabatic case, the activation energy E3 for the drift mobility of nearest-neighbor hopping is deduced, taking into account the temperature dependence of the preexponential factor. Existing models for the sign of the Hall coefficient are critically examined. It is shown that the anomalous sign reversal of the Hall coefficient can be well explained by assuming a hopping Hall factor in the form AH3=(kBT/J3)exp(KHE3/kBT) with a negative sign of J3.
主題
Silicon carbide
Hall effect
impurity band
hopping conduction
掲載誌名
Journal of Electronic Materials
50
開始ページ
1247
終了ページ
1259
ISSN
0361-5235
発行日
2021-01-04
DOI
出版者
The Minerals, Metals & Materials Society, Springer Nature
資料タイプ
学術雑誌論文
ファイル形式
PDF
著者版/出版社版
著者版
業績ID
39070
部局
総合理工学部