ID | 51373 |
ファイル | |
言語 |
英語
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著者 |
MORIKAWA, Kimihiko
Department of Materials Science, Shimane University
OKAMOTO, Hiroyuki
Department of Health Sciences, Kanazawa University
HASHIMOTO, Eiji
Hiroshima Synchrotron Radiation Center, Hiroshima University
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内容記述(抄録等) | The vacancy generation process in ultrahigh-purity aluminum single crystals with a low dislocation density was investigated by synchrotron radiation topography using a white X-ray beam. Some straight lines were observed in the topographs taken after temperature rose to 300℃ from room temperature, and they were confirmed to be rows of successive small interstitial-type dislocation loops grown as vacancy sources. It was concluded that the thermal generation mechanism of vacancies in ultrahigh-purity aluminum single crystals with a low dislocation density consists of the following two steps. First, small interstitial loops are heterogeneously formed in the crystal lattice; second, these convert to lengthened loops with the development of screw components and finally grow into rows of dislocation loops emitting vacancies into the lattice. However, contribution of new vacancy generation mechanism, growth of row of interstitial type dislocation loop for thermal equilibrium vacancy concentration is less than several percent. Therefore, major vacancy source is small vacancy cluster or vacancy type dislocation loops grown after slow cooling during crystal growth.
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主題 | row of dislocation loops
vacancy source
topography
aluminum
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掲載誌名 |
Transactions of the Materials Research Society of Japan
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巻 | 39
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号 | 2
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開始ページ | 169
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終了ページ | 172
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ISSN | 1382-3469
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ISSN(Online) | 2188-1650
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発行日 | 2014/06/01
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出版者 | 一般社団法人 日本MRS
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出版者ヨミ | イッパン シャダン ホウジン ニホン MRS
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資料タイプ |
学術雑誌論文
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ファイル形式 |
PDF
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著者版/出版社版 |
出版社版
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業績ID | e26304
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部局 |
総合理工学部
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