ID | 39099 |
ファイル | |
言語 |
英語
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著者 |
Okamoto, Hiroyuki
Department of Health Sciences, Kanazawa University
Hashimoto, Eiji
Hiroshima Synchrotron Radiation Center, Hiroshima University
Kino, Takao
Research Institute of Advanced Technology, Hiroshima Kokusai Gakuin Univ.
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内容記述(抄録等) | Large vacancy clusters in aluminum single crystals with low dislocation density, which show up as black dots in X-ray topographs, generate new dislocations and stacking faults during heat treatments. In order to obtain dislocation-free or low-dislocation-density metal single crystals, it is necessary to suppress the formation of large vacancy clusters. To this end, our starting material was either (1) ultrahigh-purity aluminum, intended to minimize the number of nucleation sites for large vacancy clusters, or (2) a dilute alloy of Zn in Al, intended to block the migration of excess vacancies by binding them with zinc atoms during slow cooling. Single crystals of the Al-Zn dilute alloy failed to improve the perfection unless a large vacancy cluster was formed. Upon cyclic annealing, however, the number density of black dots in X-ray topographs of ultrahigh-purity aluminum crystals decreased rapidly and significantly. It was thus confirmed that using a high-purity starting material was effective in suppressing the formation of large vacancy clusters.
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掲載誌名 |
Transaction of the Materials Reserch Society of Japan
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巻 | 41
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号 | 3
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開始ページ | 243
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終了ページ | 246
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ISSN | 1382-3469
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ISSN(Online) | 2188-1650
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発行日 | 2016-9-1
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DOI | |
資料タイプ |
学術雑誌論文
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ファイル形式 |
PDF
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著者版/出版社版 |
出版社版
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業績ID | e31466
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部局 |
総合理工学部
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