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language
eng
Author
Description
Experimental data obtained from temperature-dependent Hall-effect measurements on Al-doped p-type 4H-SiC samples, which exhibit an anomalous sign reversal of the Hall coefficient to negative at low temperatures, are analyzed on the basis of a previously proposed impurity hopping conduction model. According to the small-polaron theory for the nonadiabatic case, the activation energy E3 for the drift mobility of nearest-neighbor hopping is deduced, taking into account the temperature dependence of the preexponential factor. Existing models for the sign of the Hall coefficient are critically examined. It is shown that the anomalous sign reversal of the Hall coefficient can be well explained by assuming a hopping Hall factor in the form AH3=(kBT/J3)exp(KHE3/kBT) with a negative sign of J3.
Subject
Silicon carbide
Hall effect
impurity band
hopping conduction
Journal Title
Journal of Electronic Materials
Volume
50
Start Page
1247
End Page
1259
ISSN
0361-5235
Published Date
2021-01-04
DOI
Publisher
The Minerals, Metals & Materials Society, Springer Nature
NII Type
Journal Article
Format
PDF
Text Version
著者版
Gyoseki ID
39070
OAI-PMH Set
Faculty of Science and Engineering