Quantum Confinement Effect in Amorphous In–Ga–Zn–O Heterojunction Channels for Thin-Film Transistors

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Use this link to cite this item : https://ir.lib.shimane-u.ac.jp/54143

language	eng
Author	Koretomo Daichi Engineering Course, Kochi University of Technology, Kami, Kochi 782-8502, Japan Hamada , Shuhei Material Science and Engineering Course, Kochi University of Technology, Kami, Kochi 782-8502, Japan Magari, Yusaku Furuta , Mamoru Engineering Course, Kochi University of Technology, Kami, Kochi 782-8502, Japan / Material Science and Engineering Course, Kochi University of Technology, Kami, Kochi 782-8502, Japan / Center for Nanotechnology, Research Institute, Kochi University of Technology, Kami, Kochi 782-8502, Japan
Journal Title	Materials
Volume	13
Issue	8
ISSN（Online）	1996-1944
Published Date	2020-04-20
DOI	10.3390/ma13081935
Publisher	MDPI
NII Type	Journal Article
OAI-PMH Set	Faculty of Science and Engineering