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Title Transcription
エキショウ ディスプレイ パネルヨウ レーザ ケッショウカ ポリシリコン ハクマク ノ イドウド ニ タイスル プラズマ スイソカ ノ コウカ
Title Alternative (English)
Plasma-Hydrogenation Effects on Electron Mobility of Lase-Crystallized Poly-Silicon Thin Films for Liquid Crystal Display Panels
File
language
eng
Author
Kitahara, Kuninori
Description
This paper describes the behavior of H atoms in laser-crystallized poly-Si for thin-film transistors on liquid crystal display panels, where H atoms were penetrated by plasma hydrogenation in order to improve mobility. Mobility was measured by Hall effect. Si-hydrogen bonds were analyzed by Raman scattering. By short-time hydrogenation, penetrated H atoms terminate dangling bonds as the Si-H configuration largely at grain boundaries, which results in the improvement of mobility. By excessive hydrogenation, Si-H_2 bonds are generated simultaneously with degradation of mobility. Si-H_2 bonds are largely formed at ingrain defects. Hydrogenation using the hot-wire method was also made and it was shown that plasma damage does not take a part of those hydrogenation effects. Origin of correlation among Si-H_2, mobility and amount of in-grain defects was discussed based on impurity scattering and weak-bond models.
Journal Title
島根大学総合理工学部紀要. シリーズA
Volume
32
Start Page
85
End Page
96
ISSN
13427113
Published Date
1998-12-24
NCID
AA11157087
Publisher
島根大学総合理工学部
Publisher Aalternative
Interdisciplinary Faculty of Science and Engineering, Shimane University
NII Type
Departmental Bulletin Paper
OAI-PMH Set
Interdisciplinary Graduate School of Science and Engineering
Remark
30-41+ / 1997-2007
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