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eng
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Description
As-grown and annealed samples of InAs layers grown by MBE at 150-350℃ were characterized by electron probe microanalysis (EPMA), high resolution X-ray diffraction (HRXRD), Hall measurements, and secondary ion mass spectrometry (SIMS). EPMA revealed that the As mole fractions in the layers grown at 150-200 ℃ are higher by about 0.5 % than those in the layers grown at 300-350 ℃. HRXRD measurements revealed that the layers grown at 150-200 ℃ have larger lattice spacings than the InAs substrate by about 0.02 %. Hall measurements revealed that the free-electron concentration in the layer grown at 200 ℃ is as high as 1.4×10^<19> cm^<-3> while such a high concentration of impurities cannot be detected by SIMS. Upon annealing at higher temperatures than 250 ℃, both the lattice spacing and the free-electron concentration of the layer grown at 200 ℃ were observed to decrease. These phenomena can be reasonably attributed to antisite As.
Subject
Semiconducting III-V materials
Molecular beam epitaxy
Point defects
Journal Title
Journal of crystal growth
Volume
301-302
Start Page
256
End Page
259
ISSN
00220248
Published Date
2006
DOI
DOI Date
2013-04-01
NCID
AA00696341
Publisher
Elsevier
DCMI
text
NII Type
Journal Article
Format
PDF
Rights
Copyright c 2006 Elsevier B.V. All rights reserved
Text Version
著者版
Gyoseki ID
e19781
OAI-PMH Set
Interdisciplinary Graduate School of Science and Engineering
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