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ID 51373
File
language
eng
Author
MORIKAWA, Kimihiko Department of Materials Science, Shimane University
OKAMOTO, Hiroyuki Department of Health Sciences, Kanazawa University
HASHIMOTO, Eiji Hiroshima Synchrotron Radiation Center, Hiroshima University
Description
The vacancy generation process in ultrahigh-purity aluminum single crystals with a low dislocation density was investigated by synchrotron radiation topography using a white X-ray beam. Some straight lines were observed in the topographs taken after temperature rose to 300℃ from room temperature, and they were confirmed to be rows of successive small interstitial-type dislocation loops grown as vacancy sources. It was concluded that the thermal generation mechanism of vacancies in ultrahigh-purity aluminum single crystals with a low dislocation density consists of the following two steps. First, small interstitial loops are heterogeneously formed in the crystal lattice; second, these convert to lengthened loops with the development of screw components and finally grow into rows of dislocation loops emitting vacancies into the lattice. However, contribution of new vacancy generation mechanism, growth of row of interstitial type dislocation loop for thermal equilibrium vacancy concentration is less than several percent. Therefore, major vacancy source is small vacancy cluster or vacancy type dislocation loops grown after slow cooling during crystal growth.
Subject
row of dislocation loops
vacancy source
topography
aluminum
Journal Title
Transactions of the Materials Research Society of Japan
Volume
39
Issue
2
Start Page
169
End Page
172
ISSN
1382-3469
ISSN(Online)
2188-1650
Published Date
2014/06/01
Publisher
一般社団法人 日本MRS
Publisher Transcription
イッパン シャダン ホウジン ニホン MRS
NII Type
Journal Article
Format
PDF
Text Version
出版社版
Gyoseki ID
e26304
OAI-PMH Set
Faculty of Science and Engineering