﻿Title: Single Crystal Growth and Pressure Effect on Superconductivity of FeSe1-xSx 

Fig.1: (a) X-ray diffraction pattern measured for a single crystal specimen of FSS-7L (x=0.17) of
FeSe1-xSx. The inset shows a photo of a single crystal of FeSe1-xSx. (b) Plots of c-axis length versus
S-content x for FeSe1-xSx. The inset shows a photo of evacuated silica tube in which crystal growth
of FeSe1-xSx was completed. We can obtain single crystals at the tube center (TC) and colder end
(CE) of the silica tube.

Fig.2: Temperature dependence of electrical resistivity (\rho) measured under various pressure below
1.26 GPa (a) and above 1.34 GPa (b) for FeSe1-xSx with x=0.02 (FSS-1G). The data are intentionally
shifted along the longitudinal axis for clarity.

Fig.3: Temperature dependence of DC magnetization (M) measured under various pressure by
applying a magnetic field of 20 Oe perpendicular to the platelet crystal surface below 1.29 GPa (a)
and above 1.50 GPa (b) for FeSe1-xSx with x=0.02 (FSS-1G). The data are intentionally shifted
along the longitudinal axis for clarity.

Fig.4: Temperature-pressure phase diagram constructed by plotting nematic (TS), AFM (Tm) and
superconducting (Tcdia, Tczero) transition temperatures for FeSe1-xSx with x=0.02 (FSS-1G).



