ダウンロード数 : ?
ファイル
言語
英語
著者
Mizuta, Shinsei
Iyota, Masatoshi
Tanaka, Senku
内容記述(抄録等)
Photocurrent generation in an indium?tin oxide (ITO)/iodine-doped Ni-phthalocyanine (NiPc-I_x)/C_<60>/In/Al heterojunction device with x~1 was studied. By keeping the device in air after preparation, the device slowly reached a stationary state in which the sign of the photocurrent is opposite to that of a non-doped ITO/NiPc/C_<60>/In/Al device although the rectification direction for the dark current is the same. By a simulation of incident photon-to-current conversion efficiency spectra and a measurement of internal electric field by electroabsorption spectroscopy, it was elucidated that, in the doped device, the band bending near the phthalocyanine/C_<60> interface is absent and the photocurrent is generated by a weak Schottky barrier at the C_<60>/In interface. It is also shown that the C_<60> film encapsulates the doped iodine into the NiPc-I_x layer to stabilize the doping level and prevent the reaction of iodine with In.
主題
Organic device
Heterojunction
Doped organic semiconductor
Charge transfer complex
Electroabsorption
掲載誌名
Thin Solid Films
520
17
開始ページ
5761
終了ページ
5769
ISSN
00406090
発行日
2012-06
DOI
DOI公開日
2016-01-08
NCID
AA00863068
出版者
Elsevier
資料タイプ
学術雑誌論文
ファイル形式
PDF
権利関係
Copyright © 2012 Elsevier B.V. All rights reserved.
著者版/出版社版
著者版
部局
(旧組織)大学院総合理工学研究科
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