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language
eng
Author
Mizuta, Shinsei
Iyota, Masatoshi
Tanaka, Senku
Description
Photocurrent generation in an indium?tin oxide (ITO)/iodine-doped Ni-phthalocyanine (NiPc-I_x)/C_<60>/In/Al heterojunction device with x~1 was studied. By keeping the device in air after preparation, the device slowly reached a stationary state in which the sign of the photocurrent is opposite to that of a non-doped ITO/NiPc/C_<60>/In/Al device although the rectification direction for the dark current is the same. By a simulation of incident photon-to-current conversion efficiency spectra and a measurement of internal electric field by electroabsorption spectroscopy, it was elucidated that, in the doped device, the band bending near the phthalocyanine/C_<60> interface is absent and the photocurrent is generated by a weak Schottky barrier at the C_<60>/In interface. It is also shown that the C_<60> film encapsulates the doped iodine into the NiPc-I_x layer to stabilize the doping level and prevent the reaction of iodine with In.
Subject
Organic device
Heterojunction
Doped organic semiconductor
Charge transfer complex
Electroabsorption
Journal Title
Thin Solid Films
Volume
520
Issue
17
Start Page
5761
End Page
5769
ISSN
00406090
Published Date
2012-06
DOI
DOI Date
2016-01-08
NCID
AA00863068
Publisher
Elsevier
NII Type
Journal Article
Format
PDF
Rights
Copyright © 2012 Elsevier B.V. All rights reserved.
Text Version
著者版
OAI-PMH Set
Interdisciplinary Graduate School of Science and Engineering
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