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ID 53844
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language
eng
Author
Description
The temperature dependence of the reduced activation energy w = ε/kBT of the conductivity σ has been utilised for determining the impurity conduction mechanism in doped semiconductors in many studies. Herein, the formula for deconvoluting w when plural conduction mechanisms appear is used to confirm the analysis of the data of the Hall-effect measurements on Al-doped n-ZnSe samples. The analysis is performed on the basis of an impurity-Hubbard-band model which includes ε2 conduction in the top Hubbard band as well as ε3 and Efros-Shklovskii (ES) variable-range hopping (VRH) conduction processes in the bottom Hubbard band. As the result of the analysis, transitions among the three hopping conduction mechanisms of ε2, ε3, and ES VRH are clearly shown in the temperature dependence of w as well as in that of the Hall mobility, which are hardly noticed in the temperature dependence of σ. In addition, the power-law exponent of the prefactor of ES VRH conductivity is determined through the fit to the temperature dependence of w to show that it decreases from ∼ 1.5 to ∼ 0 with increasing net donor concentration.
Subject
Hopping conduction
Hall effect
ZnSe
Journal Title
Philosophical Magazine
Volume
100
Issue
15
Start Page
2018
End Page
2039
ISSN
1478-6435
ISSN(Online)
1478-6443
Published Date
2020-04-23
DOI
Publisher
Taylor and Francis Ltd.
NII Type
Journal Article
Format
PDF
Text Version
著者版
Gyoseki ID
39066
OAI-PMH Set
Faculty of Science and Engineering