Memoirs of the Graduate School of Science and Engineering Shimane University. Series A

Memoirs of the Graduate School of Science and Engineering Shimane University. Series A 33
1999-12-24 発行

GaAs基板上の長波長帯光通信用レーザの開発に向けたGaAs基板上のT1GaAsのMBE成長の試み

MBE growth of T1GaAs on GaAs substrates for fabricating long-wavelength laser diodes on GaAs substrates
Asahina, Shuichi
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Description
We report the growth of TlGaAs on(001)GaAs substrates by molecular beam epitaxy. X-ray diffraction measurements showed resolved peaks of Tl_x,Gal_<1-x>As epitaxial layers and GaAs substrates for the samples grown at substrate tempratures of 400-450℃. The peak separation of 30 are sec observed in the X-ray rocking curves indicates the existence of Tl_xGa_<1-x>As epitaxial layers having Tl contents around x=0.0016.
NCID
AA11157087