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Title Transcription
シリコン テクノロジー ノ アタラシイ カノウセイ タコウシツ シリコン ノ トクセイ トソノ オウヨウ
Title Alternative (English)
New Prospects of the Silicon Technology : Properties of Porous Silicon and their Application to New Electron Devices
File
language
jpn
Author
Harada, Hiroshi
Description
Porous silicon has versatile applications for electron devices,because of its properties of quantum confinement of carriers and/or the porous nature of the structure. This paper reviews the formation mechanism of porous silicon, the mechanism of photoluminescence still under debate and possible new electron devices. Illustrative devices of both the light emittmg diode and the micro field emitter which are carried out by author are also shown.
Journal Title
島根大学総合理工学部紀要. シリーズA
Volume
32
Start Page
97
End Page
110
ISSN
13427113
Published Date
1998-12-24
NCID
AA11157087
Publisher
島根大学総合理工学部
Publisher Aalternative
Interdisciplinary Faculty of Science and Engineering, Shimane University
NII Type
Departmental Bulletin Paper
OAI-PMH Set
Interdisciplinary Graduate School of Science and Engineering
Remark
30-41+ / 1997-2007
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